Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity.

ABSTRACT: 2D GeSe possesses black phosphorous-analog-layered structure and shows excellent environmental stability, as well as highly anisotropic in-plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in optoelectronics. However, most reported GeSe-based photodetectors show frustrating performance especially in photoresponsivity. Herein, a 2D GeSe-based phototransistor with an ultrahigh photoresponsivity is demonstrated. Its optimized photoresponsivity can be up to ≈1.6 × 105 A W-1. This high responsivity can be attributed to the highly efficient light absorption and the enhanced photoconductive gain due to the existence of trap states. The exfoliated GeSe nanosheet is confirmed to be along the [001

SUBMITTER: Zhou X 

PROVIDER: S-EPMC6096999 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature