Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study.

ABSTRACT: In this study, the thermal stability of a contact structure featuring hole-selective tungsten oxide (WO_x) and aluminum deposited onto p-type crystalline silicon (c-Si/WO_x/Al) was investigated using a combination of transmission line measurements (TLM) and in situ transmission electron microscopy (TEM) studies. The TEM images provide insight into why the charge carrier transport and recombination characteristics change as a function of temperature, particularly as the samples are annealed at temperatures above 500 °C. In the as-deposited state, a ≈ 2 nm silicon oxide (SiO_x) interlayer forms at the c-Si/WO_x interface and a ≈ 2-3 nm aluminum oxide (AlO_x) interlayer at the WO_x/Al interface. When annealing above 500 °C, Al diffus

SUBMITTER: Ali H 

PROVIDER: S-EPMC6107557 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature