Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors.

ABSTRACT: Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials. Half metallicity, an intriguing physical property arising from the metallic nature of electrons with singular spin polarization and insulating for oppositely polarized electrons, holds a great potential for a 100% spin-polarized current for high-efficiency spintronics. Conventionally synthesized thin films hardly sustain half metallicity inherited from their 3D counterparts. A fundamental challenge, in systems of reduced dimensions, is the almost inevitable spin-mixed edge or surface states in proximity to the Fermi level. Here, we predict electric field-induced half metallicity in bilayer A-type antiferromagnet

SUBMITTER: Gong SJ 

PROVIDER: S-EPMC6112705 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature