Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiO_x Passivation Layer.

ABSTRACT: In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposition of a SiO_x passivation layer. The pre-annealing played an important role in affecting device performance, which did get rid of the contamination of the lithography process. Simultaneously, the acceptor-like sub-gap density of states (DOS) of devices was extracted for further understanding the reason for improving device performance. It found that the SiO_x layer could reduce DOS of the device and successfully protect the device from surroundings. Finally, a-STO TFT applie

SUBMITTER: Liu X 

PROVIDER: S-EPMC6119873 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature