Carrier Transport Properties of MoS₂ Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation.

ABSTRACT: Over the past few years, two-dimensional materials have gained immense attention for next-generation electric sensing devices because of their unique properties. Here, we report the carrier transport properties of MoS₂ Schottky diodes under ambient as well as gas exposure conditions. MoS₂ field-effect transistors (FETs) were fabricated using Pt and Al electrodes. The work function of Pt is higher than that of MoS_2, while that of Al is lower than that of MoS₂. The MoS₂ device with Al contacts showed much higher current than that with Pt contacts because of its lower Schottky barrier height (SBH). The electrical characteristics and gas responses of the MoS₂ Schottky diodes with Al and Pt contacts were measured electrically and

SUBMITTER: Kim SJ 

PROVIDER: S-EPMC6123339 | biostudies-literature | 2018 Sep

REPOSITORIES: biostudies-literature