Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa₂O₄ Thin Films.

ABSTRACT: A single-crystalline ZnGa₂O₄ epilayer was successfully grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition. This epilayer was used as a ternary oxide semiconductor for application in high-performance metal-semiconductor-metal photoconductive deep-ultraviolet (DUV) photodetectors (PDs). At a bias of 5 V, the annealed ZnGa₂O₄ PDs showed better performance with a considerably low dark current of 1 pA, a responsivity of 86.3 A/W, cut-off wavelength of 280 nm, and a high DUV-to-visible discrimination ratio of approximately 10⁷ upon exposure to 230 nm DUV illumination than that of as-grown ZnGa₂O₄ PDs. The as-grown PDs presented a dark current of 0.5 mA, a responsivity of 2782 A/W at 23

SUBMITTER: Tsai SH 

PROVIDER: S-EPMC6145910 | biostudies-literature | 2018 Sep

REPOSITORIES: biostudies-literature