New Route for "Cold-Passivation" of Defects in Tin-Based Oxides.

ABSTRACT: Transparent conductive oxides (TCOs) are essential in technologies coupling light and electricity. For Sn-based TCOs, oxygen deficiencies and undercoordinated Sn atoms result in an extended density of states below the conduction band edge. Although shallow states provide free carriers necessary for electrical conductivity, deeper states inside the band gap are detrimental to transparency. In zinc tin oxide (ZTO), the overall optoelectronic properties can be improved by defect passivation via annealing at high temperatures. Yet, the high thermal budget associated with such treatment is incompatible with many applications. Here, we demonstrate an alternative, low-temperature passivation method, which relies on cosputtering Sn-based TCOs with silicon dioxide (SiO₂). Using amorphous

SUBMITTER: Rucavado E 

PROVIDER: S-EPMC6150684 | biostudies-literature | 2018 Aug

REPOSITORIES: biostudies-literature