Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond.

ABSTRACT: High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using TMOs as surface acceptors instead of previous molecular-like unstable acceptors. Similarly, surface-doped diamond with TMOs has recently yielded record sheet hole concentrations (2 × 10¹⁴ cm^-2) and launched the quest for its implementation in microelectronic devices. Regrettably, field-effect transistor operation based on this surface doping has been so far disappointing due to fundamental material obstacles such as (i) carrier scattering induced by nonhomogeneous morphology

SUBMITTER: Yin Z 

PROVIDER: S-EPMC6162073 | biostudies-literature | 2018 Sep

REPOSITORIES: biostudies-literature