Robustness of Voltage-induced Magnetocapacitance.

ABSTRACT: One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co₄₀Fe₄₀B₂₀/MgO/Co₄₀Fe₄₀B₂₀. We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the

SUBMITTER: Kaiju H 

PROVIDER: S-EPMC6168469 | biostudies-literature | 2018 Oct

REPOSITORIES: biostudies-literature