Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors.

ABSTRACT: Magneto-electronic logic is an innovative approach to performing high-efficiency computations. Additionally, the ultra-large scale integration requirement for computation strongly suggests exploiting magnetoresistance effects in non-magnetic semiconductor materials. Here, we demonstrate the magnetoresistance effect in a silicon nanowire field effect transistor (SNWT) fabricated by complementary metal-oxide-semiconductor (CMOS)-compatible technology. Our experimental results show that the sign and the magnitude of the magnetoresistance in SNWTs can be effectively controlled by the drain-source voltage and the gate-source voltage, respectively, playing the role of a multi-terminal tunable magnetoresistance device. Various current models are established and in good agreement with the experime

SUBMITTER: Zhang Y 

PROVIDER: S-EPMC6185961 | biostudies-literature | 2018 Oct

REPOSITORIES: biostudies-literature