Atomic Layer Deposition of Zinc Oxide: Study on the Water Pulse Reactions from First-Principles.

ABSTRACT: Atomic layer deposition (ALD) of zinc oxide thin films has been under intense research in the past few years. The most common precursors used in this process are diethyl zinc (DEZ) and water. The surface chemistry related to the growth of a zinc oxide thin film via atomic layer deposition is not entirely clear, and the ideal model of the process has been contradicted by experimental data, e.g., the incomplete elimination of the ethyl ligands from the surface and the non-negative mass change during the water pulse. In this work we investigate the surface reactions of water during the atomic layer deposition of zinc oxide. The adsorption and ligand-exchange reactions of water are studied on ethyl-saturated surface structures to grasp the relevant surface chemistry contributing to the deposit

SUBMITTER: Weckman T 

PROVIDER: S-EPMC6203180 | biostudies-literature | 2018 Apr

REPOSITORIES: biostudies-literature