Heterogeneous integration of contact-printed semiconductor nanowires for high-performance devices on large areas.

ABSTRACT: In this work, we have developed a contact-printing system to efficiently transfer the bottom-up and top-down semiconductor nanowires (NWs), preserving their as-grown features with a good control over their electronic properties. In the close-loop configuration, the printing system is controlled with parameters such as contact pressure and sliding speed/stroke. Combined with the dry pre-treatment of the receiver substrate, the system prints electronic layers with high NW density (7 NWs/μm for bottom-up ZnO and 3 NWs/μm for top-down Si NWs), NW transfer yield and reproducibility. We observed compactly packed (~115 nm average diameters of NWs, with NW-to-NW spacing ~165 nm) and well-aligned NWs (90% with respect to the printing direction). We have theoretically and experimentally analysed the

SUBMITTER: Garcia Nunez C 

PROVIDER: S-EPMC6220160 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature