Growth Mechanisms and Electronic Properties of Vertically Aligned MoS₂.

ABSTRACT: Thin films of layered semiconductors emerge as highly promising materials for energy harvesting and storage, optoelectronics and catalysis. Their natural propensity to grow as oriented crystals and films is one of their distinct properties under recent focal interest. Specifically, the reaction of transition metal films with chalcogen vapor can result in films of vertically aligned (VA) layers, while metal-oxides react with chalcogens in vapor phase to produce horizontally aligned crystals and films. The growth mechanisms of vertically oriented films are not yet fully understood, as well as their dependence on the initial metal film thickness and growth conditions. Moreover, the resulting electronic properties and the role of defects and disorder had not yet been studied, despite their cri

SUBMITTER: Stern C 

PROVIDER: S-EPMC6220198 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature