Nanoscale Investigation of Defects and Oxidation of HfSe₂.

ABSTRACT: HfSe₂ is a very good candidate for a transition metal dichalcogenide-based field-effect transistor owing to its moderate band gap of about 1 eV and its high-κ dielectric native oxide. Unfortunately, the experimentally determined charge carrier mobility is about 3 orders of magnitude lower than the theoretically predicted value. This strong deviation calls for a detailed investigation of the physical and electronic properties of HfSe₂. Here, we have studied the structure, density, and density of states of several types of defects that are abundant on the HfSe₂ surface using scanning tunneling microscopy and spectroscopy. Compared to MoS₂ and WSe₂, HfSe₂ exhibits similar type of defects, albeit with a substantially higher dens

SUBMITTER: Yao Q 

PROVIDER: S-EPMC6231157 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature