Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system.

ABSTRACT: Demonstration of ultralow energy switching mechanisms is imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their manipulation promise an ideal combination of state variables to reach attojoule range for logic and memory (i.e., ~30× lower switching energy than nanoelectronics). In BiFeO₃ (BFO), the coupling between the antiferromagnetic (AFM) and FE order is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS (complementary metal-oxide semiconductor) era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as Co_0.9Fe_0.1 or La_0.7</

SUBMITTER: Manipatruni S 

PROVIDER: S-EPMC6251722 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature