Enhancement in surface mobility and quantum transport of Bi_2-xSb_xTe_3-ySe_y topological insulator by controlling the crystal growth conditions.

ABSTRACT: Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe₂ (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial imp

SUBMITTER: Han KB 

PROVIDER: S-EPMC6251917 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature