Dielectric Properties and Ion Transport in Layered MoS₂ Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics.

ABSTRACT: Electronic and dielectric properties of vapor-phase grown MoS₂ have been investigated in metal/MoS₂/silicon capacitor structures by capacitance-voltage and conductance-voltage techniques. Analytical methods confirm the MoS₂ layered structure, the presence of interfacial silicon oxide (SiO _x ) and the composition of the films. Electrical characteristics in combination with theoretical considerations quantify the concentration of electron states at the interface between Si and a 2.5-3 nm thick silicon oxide interlayer between Si and MoS₂. Measurements under electric field stress indicate the existence of mobile ions in MoS₂ that interact with interface states. On the basis of time-of-flight secondary ion mass spectromet

SUBMITTER: Belete M 

PROVIDER: S-EPMC6257629 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature