InGaAs Diodes for Terahertz Sensing-Effect of Molecular Beam Epitaxy Growth Conditions.

ABSTRACT: InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditions and role of defects for device operation. We present a detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes. The diodes are fabricated from InGaAs wafers grown by molecular beam epitaxy (MBE) on semi-insulating InP substrate under different technological conditions. Photoreflectance spectra indicated the presence of strong built-in electric fields reaching up to 49 kV/cm. It was demonstrated that the spectral density of voltage

SUBMITTER: Palenskis V 

PROVIDER: S-EPMC6264118 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature