Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor.

ABSTRACT: Coupling spin qubits to electric fields is attractive to simplify qubit manipulation and couple qubits over long distances. Electron spins in silicon offer long lifetimes, but their weak spin-orbit interaction makes electrical coupling challenging. Hole spins bound to acceptor dopants, spin-orbit-coupled J = 3/2 systems similar to Si vacancies in SiC and single Co dopants, are an electrically active spin system in silicon. However, J = 3/2 systems are much less studied than S = 1/2 electrons, and spin readout has not yet been demonstrated for acceptors in silicon. Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify m _J = ±1/2 and m <

SUBMITTER: van der Heijden J 

PROVIDER: S-EPMC6286166 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature