Anomalous diffusion along metal/ceramic interfaces.

ABSTRACT: Interface diffusion along a metal/ceramic interface present in numerous energy and electronic devices can critically affect their performance and stability. Hole formation in a polycrystalline Ni film on an α-Al₂O₃ substrate coupled with a continuum diffusion analysis demonstrates that Ni diffusion along the Ni/α-Al₂O₃ interface is surprisingly fast. Ab initio calculations demonstrate that both Ni vacancy formation and migration energies at the coherent Ni/α-Al₂O₃ interface are much smaller than in bulk Ni, suggesting that the activation energy for diffusion along coherent Ni/α-Al₂O₃ interfaces is comparable to that along (incoherent/high angle) grain boundaries. Based on these results, we develop a sim

SUBMITTER: Kumar A 

PROVIDER: S-EPMC6286315 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature