High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio.

ABSTRACT: The anodic dissolution of silicon in acidic electrolytes is a well-known technology enabling the silicon machining to be accurately controlled down to the micrometer scale in low-doped n-type silicon electrodes. Attempts to scale down this technology to the submicrometer scale has shown to be challenging, though it premises to enable the fabrication of meso and nano structures/systems that would greatly impact the fields of biosensors and nanomedicine. In this work, we report on the electrochemical etching at high anodic voltages (up to 40 V) of two-dimensional regular arrays of millions pores per square centimeter (up to 30 × 10⁶ cm^-2) with sub-micrometric diameter (down to ~860 nm), high depth (up to ~40 μm), and high aspect-ratio (up to ~45) using low-doped

SUBMITTER: Cozzi C 

PROVIDER: S-EPMC6287200 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature