Vertical WS₂/SnS₂ van der Waals Heterostructure for Tunneling Transistors.

ABSTRACT: Van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides (TMD) materials have stimulated tremendous research interest in various device applications, especially in energy-efficient future-generation electronics. Such ultra-thin stacks as tunnel junction theoretically present unprecedented possibilities of tunable relative band alignment and pristine interfaces, which enable significant performance enhancement for steep-slope tunneling transistors. In this work, the optimal 2D-2D heterostructure for tunneling transistors is presented and elaborately engineered, taking into consideration both electric properties and material stability. The key challenges, including band alignment and metal-to-2D semiconductor contact resistances, are optimized separate

SUBMITTER: Wang J 

PROVIDER: S-EPMC6288168 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature