Chemistry of resistivity changes in TiTe/Al₂O₃ conductive-bridge memories.

ABSTRACT: We report the chemical phenomena involved in the reverse forming (negative bias on top electrode) and reset of a TaN/TiTe/Al₂O₃/Ta memory stack. Hard X-ray photoelectron spectroscopy was used to conduct a non-destructive investigation of the critical interfaces between the electrolyte (Al₂O₃) and the TiTe top and Ta bottom electrodes. During reverse forming, Te accumulates at the TiTe/Al₂O₃ interface, the TiO_x layer between the electrolyte and the electrode is reduced and the TaO_x at the interface with Al₂O₃ is oxidized. These interfacial redox processes are related to an oxygen drift toward the bottom electrode under applied bias, which may favour Te transport into the electrolyte

SUBMITTER: Kazar Mendes M 

PROVIDER: S-EPMC6298955 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature