ALD-Zn _xTi _yO as Window Layer in Cu(In,Ga)Se₂ Solar Cells.

ABSTRACT: We report on the application of Zn _xTi _yO deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se₂ (CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the absorber layer and the front contact. Replacing the sputter deposited ZnO with ALD-Zn _xTi _yO allowed a reduction of the CdS layer thickness without adversely affecting open-circuit voltage ( V_OC). This leads to an increased photocurrent density with a device efficiency of up to 20.8% by minimizing the parasitic absorption losses commonly observed for CdS. ALD was chosen as method to deposit homogeneous layers of Zn _xTi _yO with varyi

SUBMITTER: Lockinger J 

PROVIDER: S-EPMC6302902 | biostudies-literature | 2018 Dec

REPOSITORIES: biostudies-literature