Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks.

ABSTRACT: Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity.

SUBMITTER: Aseev P 

PROVIDER: S-EPMC6331184 | biostudies-literature | 2019 Jan

REPOSITORIES: biostudies-literature