Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs.

ABSTRACT: Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of Things (IoT) products. A vertical gate-all-around (VGAA) architecture with a core shell (C-S) structure is the leading contender to meet CMOS footprint requirements while simultaneously delivering high current drive for high performance specifications and subthreshold swing below the Boltzmann limit for low power operation. In this work, VGAA nanowire GaSb/InAs C-S TFETs are demonstrated experimentally for the first time with key device properties of subthreshold swing S = 40 mV/dec (V_d = 10 mV) and current drive up to 40 μA/wire (V_d = 0.3 V, diameter d = 50 nm) while dimensions including core diameter d, shell thic

SUBMITTER: Vasen T 

PROVIDER: S-EPMC6336843 | biostudies-literature | 2019 Jan

REPOSITORIES: biostudies-literature