Large-Area, Ultrathin Metal-Oxide Semiconductor Nanoribbon Arrays Fabricated by Chemical Lift-Off Lithography.

ABSTRACT: Nanoribbon- and nanowire-based field-effect transistors (FETs) have attracted significant attention due to their high surface-to-volume ratios, which make them effective as chemical and biological sensors. However, the conventional nanofabrication of these devices is challenging and costly, posing a major barrier to widespread use. We report a high-throughput approach for producing arrays of ultrathin (∼3 nm) In₂O₃ nanoribbon FETs at the wafer scale. Uniform films of semiconducting In₂O₃ were prepared on Si/SiO₂ surfaces via a sol-gel process prior to depositing Au/Ti metal layers. Commercially available high-definition digital versatile discs were employed as low-cost, large-area templates to prepare polymeric stamps for chemical lift

SUBMITTER: Zhao C 

PROVIDER: S-EPMC6363913 | biostudies-literature | 2018 Sep

REPOSITORIES: biostudies-literature