Probing vacancy behavior across complex oxide heterointerfaces.

ABSTRACT: Oxygen vacancies ( V O • • ) play a critical role as defects in complex oxides in establishing functionality in systems including memristors, all-oxide electronics, and electrochemical cells that comprise metal-insulator-metal or complex oxide heterostructure configurations. Improving oxide-oxide interfaces necessitates a direct, spatial understanding of vacancy distributions that define electrochemically active regions. We show vacancies deplete over micrometer-level distances in Nb-doped SrTiO₃ (Nb:SrTiO₃) substrates due to deposition and post-annealing processes. We convert the surface potential across a strontium titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial (<100 nm) vacancy profiles within STO using (T = 500°C) in si

SUBMITTER: Zhu J 

PROVIDER: S-EPMC6386560 | biostudies-literature | 2019 Feb

REPOSITORIES: biostudies-literature