Electrical Transition in Isostructural VO₂ Thin-Film Heterostructures.

ABSTRACT: Control over the concurrent occurrence of structural (monoclinic to tetragonal) and electrical (insulator to the conductor) transitions presents a formidable challenge for VO₂-based thin film devices. Speed, lifetime, and reliability of these devices can be significantly improved by utilizing solely electrical transition while eliminating structural transition. We design a novel strain-stabilized isostructural VO₂ epitaxial thin-film system where the electrical transition occurs without any observable structural transition. The thin-film heterostructures with a completely relaxed NiO buffer layer have been synthesized allowing complete control over strains in VO₂ films. The strain trapping in VO₂ thin films occurs below a critical thickness by ar

SUBMITTER: Moatti A 

PROVIDER: S-EPMC6395818 | biostudies-literature | 2019 Feb

REPOSITORIES: biostudies-literature