Topological edge states in high-temperature superconductiving FeSe/SrTiO₃ films with Te substitution.

ABSTRACT: Using first principles theory, we investigated the behavior of the one-dimensional (1D) topological edge states of high temperature superconductiviing FeSe/SrTiO₃ films with Te atoms substitution to Se atoms in the bottom (top) layer in single-layer FeSe, as a function of strain. It was discovered that the 1D topological edge states are present in single-unit-cell FeSe film on SrTiO₃, but are absent when more than 50% Se atoms are replaced by Te atoms. Stress induced displacive phase transformation exists in FeSe/SrTiO₃ film when Te atoms substitute Se atoms in the bottom (top) layer in single-layer FeSe under 3% strain respectively. The 1D topological edge states are present under 3% (1.8%) strain in FeSe/SrTiO₃ films with Te substitution Se in

SUBMITTER: Chen L 

PROVIDER: S-EPMC6411874 | biostudies-literature | 2019 Mar

REPOSITORIES: biostudies-literature