Spontaneous current constriction in threshold switching devices.

ABSTRACT: Threshold switching devices are of increasing importance for a number of applications including solid-state memories and neuromorphic circuits. Their non-linear characteristics are thought to be associated with a spontaneous (occurring without an apparent external stimulus) current flow constriction but the extent and the underlying mechanism are a subject of debate. Here we use Scanning Joule Expansion Microscopy to demonstrate that, in functional layers with thermally activated electrical conductivity, the current spontaneously and gradually constricts when a device is biased into the negative differential resistance region. We also show that the S-type negative differential resistance I-V characteristics are only a subset of possible solutions and it is possible to have multiple current

SUBMITTER: Goodwill JM 

PROVIDER: S-EPMC6456614 | biostudies-literature | 2019 Apr

REPOSITORIES: biostudies-literature