Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires.

ABSTRACT: Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline In_xGa_1-xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric In_xGa_1-xSb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm² V^-1 s^-1 for In_0.09Ga_0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical commu

SUBMITTER: Li D 

PROVIDER: S-EPMC6458123 | biostudies-literature | 2019 Apr

REPOSITORIES: biostudies-literature