Mapping Electron Transfer at MoS₂ Using Scanning Electrochemical Microscopy.

ABSTRACT: Understanding the role of macroscopic and atomic defects in the interfacial electron transfer properties of layered transition metal dichalcogenides is important in optimizing their performance in energy conversion and electronic devices. Means of determining the heterogeneous electron transfer rate constant, k, have relied on the deliberate exposure of specific electrode regions or additional surface characterization to correlate proposed active sites to voltammetric features. Few studies have investigated the electrochemical activity of surface features of layered dichalcogenides under the same experimental conditions. Herein, MoS₂ flakes with well-defined features were mapped using scanning electrochemical microscopy (SECM). At visually flat areas of MoS₂, k of hex

SUBMITTER: Ritzert NL 

PROVIDER: S-EPMC6501596 | biostudies-literature | 2018 Nov

REPOSITORIES: biostudies-literature