In Situ Transmission Electron Microscopy Analysis of Aluminum-Germanium Nanowire Solid-State Reaction.

ABSTRACT: To fully exploit the potential of semiconducting nanowires for devices, high quality electrical contacts are of paramount importance. This work presents a detailed in situ transmission electron microscopy (TEM) study of a very promising type of NW contact where aluminum metal enters the germanium semiconducting nanowire to form an extremely abrupt and clean axial metal-semiconductor interface. We study this solid-state reaction between the aluminum contact and germanium nanowire in situ in the TEM using two different local heating methods. Following the reaction interface of the intrusion of Al in the Ge nanowire shows that at temperatures between 250 and 330 °C the position of the interface as a function of time is well fitted by a square root function, indicating that the reaction rate i

SUBMITTER: El Hajraoui K 

PROVIDER: S-EPMC6509643 | biostudies-literature | 2019 May

REPOSITORIES: biostudies-literature