Extended π-conjugative n-p type homostructural graphitic carbon nitride for photodegradation and charge-storage applications.

ABSTRACT: An n-p type homostructural metal-free graphitic carbon nitride (g-C₃N₄) semiconductor is designed and developed for pollutant abatement and energy storage application. The successful grafting of vibrio-like morphology-based g-C₃N₄ by 2, 5-Thiophenedicarboxylic acid (TDA) molecule and the development of amide-type linkage substantiated the prosperous uniting of g-C₃N₄ with organic TDA moiety is demonstrated. An extended π-conjugative TDA grafted g-C₃N₄ exhibited band gap tunability with broadband optical absorbance in the visible region. Mott-Schottky analysis exhibited the formation of n-p type homostructural property. As a result, obtained TDA grafted g-C₃N₄ has extended π-conjuga

SUBMITTER: Vidyasagar D 

PROVIDER: S-EPMC6510722 | biostudies-literature | 2019 May

REPOSITORIES: biostudies-literature