A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X-Point Memory Applications.

ABSTRACT: Leakage interference between memory cells is the primary obstacle for enlarging X-point memory arrays. Metal-filament threshold switches, possessing excellent selectivity and low leakage current, are developed in series with memory cells to reduce sneak path current and lower power consumption. However, these selectors typically have limited on-state currents (≤10 µA), which are insufficient for memory RESET operations. Here, a strategy is proposed to achieve sufficiently large RESET current (≈2.3 mA) by introducing highly ordered Ag nanodots to the threshold switch. Compared to the Ag thin film case, Ag nanodots as active electrode could avoid excessive Ag atoms migration into solid electrolyte during operations, which causes stable conductive filament growth. Furthermore, Ag nanodots wit

SUBMITTER: Hua Q 

PROVIDER: S-EPMC6524079 | biostudies-literature | 2019 May

REPOSITORIES: biostudies-literature