Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies.

ABSTRACT: The chemical and electrical properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, it often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activation of adatom diffusion by laser irradiation, silicon impurities are incorporated into the lattice of both materials. After an exposure of ∼1 ion/nm², we find Si-substitution densities of 0.15 nm^-2 in graphene and 0.05 nm^-2 in nanotubes, as revealed by atomically resolved scanning transmission electron microscopy. In good agreement with predic

SUBMITTER: Inani H 

PROVIDER: S-EPMC6539548 | biostudies-literature | 2019 May

REPOSITORIES: biostudies-literature