Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts.

ABSTRACT: Barriers that charge carriers experience while injecting into channels play a crucial role on determining the device properties of van der Waals semiconductors (vdWS). Among various strategies to control these barriers, inserting a graphene layer underneath bulk metal may be a promising choice, which is still lacking experimental verification. Here, it is demonstrated that graphene/metal hybrid structures can form quasi-van der Waals contacts (q-vdWC) to ambipolar vdWS, combining the advantages of individual metal and graphene contacts together. A new analysis model is adopted to define the barriers and to extract the barrier heights in ambipolar vdWS. The devices with q-vdWC show significantly reduced Schottky barrier heights and thermionic field emission activation energies, ability of s

SUBMITTER: Wang J 

PROVIDER: S-EPMC6548948 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature