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Gap initiation with 20.35 mm: an initiator integrating the Al/CuO_x multilayer film and traditional electronic plug to enhance the ignition ability.

ABSTRACT: In order to enhance the ignition ability and reliability of traditional electronic initiators, a novel electronic initiator has been designed to integrate with a nanothermite multilayer film and an electrode plug. The Al/CuO_x nanothermite multilayer film with different thickness is deposited on the surface of the electrode plug by magnetron sputtering which uses Pt-W wire as electronic resistance. The exothermicity of Al/CuO_x nanothermite multilayer film is so favourable that the ignition ability of electronic initiator is significantly improved. The full firing-voltage sensitivity of the electronic initiator is 10.8 V. The thickness of Al/CuO_x multilayer film has negligible effects on the ignition time and ignition energy, but leads to great impacts on the function time, the maximum length of combustion flame and ignition ability. The electrical ignition experiments have exhibited outstanding ignition ability, since the electronic initiator can easily fire the insensitive ignition composition of boron-potassium nitrate (B-KNO₃) tablet in a gap of 20.35 mm. It proves that this novel proposal of remoulding the traditional electronic ignition devices will distinctly improve the ignition ability and reliability of electronic initiator.

SUBMITTER: Ni D

PROVIDER: S-EPMC6549997 | biostudies-literature | 2019 May

REPOSITORIES: biostudies-literature

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Gap initiation with 20.35 mm: an initiator integrating the Al/CuOx multilayer film and traditional electronic plug to enhance the ignition ability.

Ni Debin D Yu Guoqiang G Shi Shengnan S Xu Dong D Chu Enyi E Yu Chunpei C Zhen Zilong Z Zhang Wenchao W

Royal Society open science 20190501 5

In order to enhance the ignition ability and reliability of traditional electronic initiators, a novel electronic initiator has been designed to integrate with a nanothermite multilayer film and an electrode plug. The Al/CuOx nanothermite multilayer film with different thickness is deposited on the surface of the electrode plug by magnetron sputtering which uses Pt-W wire as electronic resistance. The exothermicity of Al/CuOx nanothermite multilayer film is so favourable th ...[more]

PMID: 31218024

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Project description:Well designed and optimized epitaxial heterostructures lie at the foundation of materials development for photovoltaic, photocatalytic, and photoelectrochemistry applications. Heterostructure materials offer tunable control over charge separation and transport at the same time preventing recombination of photogenerated excitations at the interface. Thus, it is of paramount importance that a detailed understanding is developed as the basis for further optimization strategies and design. Oxides of copper are nontoxic, low cost, abundant materials with a straightforward and stable manufacturing process. However, in individual applications, they suffer from inefficient charge transport of photogenerated carriers. Hence, in this work, we investigate the role of the interface between epitaxially aligned CuO and Cu2O to explore the potential benefits of such an architecture for more efficient electron and hole transfer. The CuO/Cu2O heterojunction nature, stability, bonding mechanism, interface dipole, electronic structure, and band bending were rationalized using hybrid density functional theory calculations. New electronic states are identified at the interface itself, which are originating neither from lattice mismatch nor strained Cu-O bonds. They form as a result of a change in coordination environment of CuO surface Cu2+ cations and an electron transfer across the interface Cu1+-O bond. The first process creates occupied defect-like electronic states above the valence band, while the second leaves hole states below the conduction band. These are constitutional to the interface and are highly likely to contribute to recombination effects competing with the improved charged separation from the suitable band bending and alignment and thus would limit the expected output photocurrent and photovoltage. Finally, a favorable effect of interstitial oxygen defects has been shown to allow for band gap tunability at the interface but only to the point of the integral geometrical contact limit of the heterostructure itself.

Dataset Information

Gap initiation with 20.35 mm: an initiator integrating the Al/CuO_x multilayer film and traditional electronic plug to enhance the ignition ability.

Publications

Gap initiation with 20.35 mm: an initiator integrating the Al/CuO<sub>x</sub> multilayer film and traditional electronic plug to enhance the ignition ability.

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