Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.

ABSTRACT: Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated by solution-process have been reported for emerging approaches based on device configuration and fabrication process. However, several challenges pertaining to practical and effective solution-process technologies remain to be resolved before low-power consuming AOS-based TFTs for wearable electronics can be realized. In this paper, we investigate the non-thermal annealing processes for sol-gel based metal-oxide semiconductor and dielectric films fabricated by deep ultraviolet (DUV) photo and m

SUBMITTER: Yu BS 

PROVIDER: S-EPMC6558031 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature