Grain Boundary Interfaces Controlled by Reduced Graphene Oxide in Nonstoichiometric SrTiO_3-δ Thermoelectrics.

ABSTRACT: Point defect or doping in Strontium titanium oxide (STO) largely determines the thermoelectric (TE) properties. So far, insufficient knowledge exists on the impact of double Schottky barrier on the TE performance. Herein, we report a drastic effect of double Schottky barrier on the TE performance in undoped STO. It demonstrates that incorporation of Reduced Graphene Oxide (RGO) into undoped STO weakens the double Schottky barrier and thereby results in a simultaneous increase in both carrier concentration and mobility of undoped STO. The enhanced mobility exhibits single crystal-like behavior. This increase in the carrier concentration and mobility boosts the electrical conductivity and power factor of undoped STO, which is attributed to the reduction of the double Schottky barrier height

SUBMITTER: Rahman JU 

PROVIDER: S-EPMC6565681 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature