Moisture effect on the diffusion of Cu ions in Cu/Ta₂O₅/Pt and Cu/SiO₂/Pt resistance switches: a first-principles study.

ABSTRACT: Cu/Ta₂O₅/Pt and Cu/SiO₂/Pt are two of the most promising resistance switches. From experimental observations, it is speculated that the presence of H₂O in the amorphous Ta₂O₅ and SiO₂ (a-Ta₂O₅ and a-SiO₂) facilitates the rate-limiting step during the switching process. This rate-limiting step is essentially the diffusion of Cu ions along the nanopores of the amorphous. To better understand this behavior and obtain a detailed examination of the atomic structures, a first-principles simulation was conducted. In addition, we investigate the diffusion behaviors of Cu ions in bare a-Ta₂O₅ nanopore and in the one covered with H₂O-together with those in a-

SUBMITTER: Xiao B 

PROVIDER: S-EPMC6567064 | biostudies-literature | 2019

REPOSITORIES: biostudies-literature