Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices.

ABSTRACT: Implementing selective-area p-type doping through ion implantation is the most attractive choice for the fabrication of GaN-based bipolar power and related devices. However, the low activation efficiency of magnesium (Mg) ions and the inevitable surface decomposition during high-temperature activation annealing process still limit the use of this technology for GaN-based devices. In this work, we demonstrate successful p-type doping of GaN using protective coatings during a Mg ion implantation and thermal activation process. The p-type conduction of GaN is evidenced by the positive Seebeck coefficient obtained during thermopower characterization. On this basis, a GaN p-i-n diode is fabricated, exhibiting distinct rectifying characteristics with a turn-on voltage of 3 V with an acceptable r

SUBMITTER: Shi YT 

PROVIDER: S-EPMC6584666 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature