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Carrier control in 2D transition metal dichalcogenides with Al₂O₃ dielectric.

ABSTRACT: We report transport measurements of dual gated MoS₂ and WSe₂ devices using atomic layer deposition grown Al₂O₃ as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.

SUBMITTER: Lau CS

PROVIDER: S-EPMC6584693 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature

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Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric.

Lau Chit Siong CS Chee Jing Yee JY Thian Dickson D Kawai Hiroyo H Deng Jie J Wong Swee Liang SL Ooi Zi En ZE Lim Yee-Fun YF Goh Kuan Eng Johnson KEJ

Scientific reports 20190619 1

We report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics. ...[more]

PMID: 31217503

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