Confocal photoluminescence investigation to identify basal stacking fault's role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes.

ABSTRACT: High spatial-resolution confocal photoluminescence (PL) measurements have been performed on a series of semi-polar (11-22) InGaN light emitting diodes (LEDs) with emission wavelengths up to yellow. These LED samples have been grown on our high crystal quality semi-polar GaN templates which feature periodically distributed basal stacking faults (BSFs), which facilitates the study of the influence of BSFs on their optical performance. Scanning confocal PL measurements have been performed across BSFs regions and BSF-free regions. For the blue LED, both the emission intensity and the emission wavelength exhibit a periodic behavior, matching the periodic distribution of BSFs. Furthermore, the BSF regions show a longer emission wavelength and a reduced emission intensity compared with the BSF-fr

SUBMITTER: Zhang Y 

PROVIDER: S-EPMC6611846 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature