Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO_2-x Memristive Devices.

ABSTRACT: Recent developments in artificial intelligence technology has facilitated advances in neuromorphic computing. Electrical elements mimicking the role of synapses are crucial building blocks for neuromorphic computers. Although various types of two-terminal memristive devices have emerged in the mainstream of synaptic devices, a hetero-synaptic artificial synapse, i.e., one with modulatable plasticity induced by multiple connections of synapses, is intriguing. Here, a synaptic device with tunable synapse plasticity is presented that is based on a simple four-terminal rutile TiO_2-x single-crystal memristor. In this device, the oxygen vacancy distribution in TiO_2-x and the associated bulk carrier conduction can be used to control the resistance of the device. There are tw

SUBMITTER: Nagata Z 

PROVIDER: S-EPMC6620322 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature