Synaptic and Fast Switching Memristance in Porous Silicon-Based Structures.

ABSTRACT: Memristors are two terminal electronic components whose conductance depends on the amount of charge that has flown across them over time. This dependence can be gradual, such as in synaptic memristors, or abrupt, as in resistive switching memristors. Either of these memory effects are very promising for the development of a whole new generation of electronic devices. For the successful implementation of practical memristors, however, the development of low cost industry compatible memristive materials is required. Here the memristive properties of differently processed porous silicon structures are presented, which are suitable for different applications. Electrical characterization and SPICE simulations show that laser-carbonized porous silicon shows a strong synaptic memristive behavior

SUBMITTER: Torres-Costa V 

PROVIDER: S-EPMC6631600 | biostudies-literature | 2019 May

REPOSITORIES: biostudies-literature