Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator.

ABSTRACT: In a MIS (Metal/Insulator/Semiconductor) structure consisting of two terminals, a systematic analysis of the electrical charge transport mechanism through an insulator is essential for advanced electronic application devices such as next-generation memories based on resistance differences. Herein, we have verified the charge transfer phenomenon in MIOS (Metal/Insulator/Oxide Semiconductor) diodes through a defect engineering of the insulator. By selectively generating the oxygen vacancies in the insulator (Al₂O₃), the MIOS diode rectification of the P⁺⁺-Si anode/Al₂O₃/IGZO cathode reached 10⁷ at 1.8 V and considerably suppressed the leakage current. Studying the current-voltage characteristics of MIOS diodes shows that the c

SUBMITTER: Lee D 

PROVIDER: S-EPMC6635483 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature