Flexible Thermal Sensors Based on Organic Field-Effect Transistors with Polymeric Channel/Gate-Insulating and Light-Blocking Layers.

ABSTRACT: Here, we report flexible thermal sensors based on organic field-effect transistors (OFETs) that are fabricated using polymeric channel and gate-insulating layers on flexible polymer film substrates. Poly(3-hexylthiophene) and poly(methyl methacrylate) were used as the channel and gate-insulating layers, respectively, whereas indium-tin oxide-coated poly(ethylene naphthalate) films (thickness = 130 μm) were employed as the flexible substrates. Aluminum-coated polymer films were attached on top of the channel parts in the flexible OFETs to block any influence by light illumination. The present flexible OFET-based thermal sensors exhibited typical p-type transistor characteristics at a temperature range of 25-100 °C, while the hole mobility of devices was linearly increased with the temperatu

SUBMITTER: Song M 

PROVIDER: S-EPMC6640922 | biostudies-literature | 2017 Jul

REPOSITORIES: biostudies-literature