Effects of Dielectric Material, HMDS Layer, and Channel Length on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors.

ABSTRACT: It is well-known that the improvement in the performance of organic field-effect transistors (OFETs) relies primarily on growth properties of organic molecules on gate dielectrics, their interface behavior, and on understanding the physical processes occurring during device operation. In this work, the relation of varying the dielectric materials in an n-type OFET device based on 1,7-dibromo-N,N'-dioctadecyl-3,4,9,10-perylenetetracarboxylic diimide (Br₂PTCDI-C18) molecule on a low-cost glass substrate at different channel lengths is reported, which is conceptually very important and fundamental in the context of device performance. Anodized alumina (Al₂O₃) along with dielectric films of polyvinyl alcohol (PVA) or polymethylmethacrylate (PMMA)

SUBMITTER: Vasimalla S 

PROVIDER: S-EPMC6641061 | biostudies-literature | 2017 Jun

REPOSITORIES: biostudies-literature